Scope

The aim of this conference is to discuss recent advances in crystal growth, characterization, control of material properties, device fabrication and packaging technologies, as well as system applications concerning silicon carbide (SiC) and related materials.

The objective is to promote the production and commercialization of advanced devices and systems for low-resistance / high-voltage switching, high-frequency amplification, and high-temperature operation.

The conference also serves as an international forum for the exchange of ideas on recent scientific and technical issues among researchers and engineers in industrial, academic and public sectors.

The scope of this conference covers the following topics on silicon carbide and related materials, including other wide bandgap (WBG) semiconductors such as III-nitrides, oxides, and diamond.

Topics

Topics will include:

• Growth and Wafer Manufacturing
  Bulk and epitaxial growth, Wafer manufacturing
• Characterization and Defect Engineering
  Fundamental properties, Point and extended defects, Characterization and imaging techniques, Surface characterization and modification, Functionalization for Quantum, Optoelectronic and Photocatalytic technologies
• MOS Gate Stacks and Device Processing
  MOS interfaces and insulators, Device fabrication processes (e.g. Implantation, Oxidation, Surface treatments, Metallization, Ohmic and Schottky contact formations, and Dry etching technologies)
• Power and High-Frequency Devices
  Low-voltage and high-voltage power devices, High-frequency devices, Device measurements, Modeling and simulations
• Packaging and Applications
  Modular and driver-circuit technologies, System applications, Packaging and reliabilities, Development of harsh-environment devices including high-temperature applications (e.g. Sensors and ICs)

for SiC and related materials including other wide bandgap semiconductors such as III-nitrides, oxides, and diamond.