ICSCRM2019 | International Conference on Silicon Carbide and Related Materials / September 29 - October 4, 2019 / Kyoto, Japan


On Sunday, September 29, a Tutorial Day will be organized specifically, but not exclusively, for young researchers (PhD students and Postdocs) as a satellite event of ICSCRM 2019. The main objective of the Tutorial Day is to introduce the important concepts and hot topics to be discussed during the conference. The title of this tutorial program is “SiC-MOSFET; Properties and Applications.” This includes the current status of SiC-MOSFETs; structural design, reliability, characterization, packaging technique and applications. Lectures will be given by six invited speakers, all well recognized in their respective field, and will be easy to follow for young researchers with different backgrounds and fields of activity. Participants need to register for the Tutorial Day through the conference web site. The registration fees are as follows;

ICSCRM2019 Tutrial Information

Title SiC-MOSFET; Properties and Applications
Schedule Sunday, September 29
10:30 am – 5:00 pm (tentative)
Venue Kyoto International Conference Center, Room A
Program TBA (6 invited talks)
Registration Fee Regular Participant Online JPY 9,000
On-site JPY 12,000
Student Online JPY 5,000
Lunch served

The registration fees include participation, lunch, coffee breaks and a booklet containing all the presentations.