On Sunday, September 29, a Tutorial Day will be organized specifically, but not exclusively, for young researchers (PhD students and Postdocs) as a satellite event of ICSCRM 2019. The main objective of the Tutorial Day is to introduce the important concepts and hot topics to be discussed during the conference. The title of this tutorial program is “SiC-MOSFETs; Features and Applications.” This includes the current status of SiC-MOSFETs; structural design, reliability, characterization, packaging technique and applications. Lectures will be given by six invited speakers, all well recognized in their respective field, and will be easy to follow for young researchers with different backgrounds and fields of activity. Participants need to register for the Tutorial Day through the conference web site. The registration fees are as follows;
Date: September 29, 2019 Tutorial title: “SiC-MOSFETs; Features and Applications” Venue: Kyoto International Conference Center, Room A [NEW!] The registration desk will be open at 9:00 am at the main entrance of the Conference center.
Program (1) 10:30-11:15 Prof. Noriyuki Iwamuro (University of Tsukuba) Device Design and Characteristics of SiC MOSFETs (2) 11:15-12:00 Prof. Philip Mawby (University of Warwick) SiC Power Device Reliability Considerations (3) 13:30-14:15 Prof. Josef Lutz (Chemnitz University of Technology) Packaging and Modules with SiC MOSFETs and Related Reliability Aspects (4) 14:15-15:00 Prof. Juan Rivas-Davila (Stanford University) Driving Methods for SiC Devices at High-Frequencies (5) 15:30-16:15 Prof. Alberto Castellazzi (Kyoto University of Advanced Science) Multi-Level Inverter Topologies for Full Exploitation of SiC MOS Characteristics (6) 16:15-17:00 Dr. Samuel Araujo (Robert Bosch GmbH) SiC MOSFETs at Industrial Applications – Addressing Challenges and Reaping Benefits
|Registration Fee||Regular Participant||Online||JPY 9,000|
The registration fees include participation, lunch, coffee breaks and a booklet containing all the presentations. [NEW!] The 150-pages Tutorial textbook is partly available: Click here!.
Prof. Noriyuki Iwamuro received the ph.D degree in electrical engineering from Waseda University, Tokyo. Since 1988, he has been engaged in research and development of Si IGBTs in Fuji Electric Co.,Ltd. In 1992, he was a visiting scholar of Power Semiconductor Research Center (Director: Prof. B.Jayant Baliga) at North Carolina State University. In 2009, he has been in National Institute of Advanced Industrial Science and Technology, and engaged in development of SiC MOSFETs and SBDs. In 2013, he became a professor of University of Tsukuba. His current research interest is a study of SiC power semiconductor devices.
Prof. Philip Mawby holds the Chair of Power Electronics within the School of Engineering at Warwick. He is also Head of Research for the school. He has been at the University for just over 14 years, and has established a world leading research group in SiC based power electronics. He is one of the UK’s leading authorities on Silicon Carbide power device technology and applications and has been working on the topic for more than 25 years. He also has an internationally recognized activity in the modelling of power devices, particularly in the area of compact modelling and fast systems modelling.
Prof. Josef Lutz graduated in Physics at the University of Stuttgart, from 1983 he was with Semikron Electronics, in Nuremberg. He invented the Controlled Axial Lifetime (CAL) diode and holds several patents. In 1999 he graduated as PhD in electrical engineering at the University of Ilmenau. Since August 2001 he is Professor for Power Electronics and Electromagnetic Compatibility at Chemnitz University of Technology. He is senior member of IEEE and serves in several international committees (PCIM, EPE, ISPS, CIPS) and in the advisory board of the Journal Microelectronics Reliability. His book “Semiconductor Power Devices – Physics, Characteristics, Reliability” is printed in German (2006, 2012), in English (2011, 2018) and in Chinese (2013). His focus of research is on power semiconductor devices, ruggedness and reliability.
Prof. Juan Rivas-Davila is an Assistant Professor at Stanford’s Electrical Engineering department. Before, he served as an Assistant Professor at the University of Michigan and worked for GE Global Research in the high-frequency power electronics group. He has extensive experience in the design of dc-dc power converters working at MHz frequencies. He has published peer-reviewed work on power converters reaching up to 100 MHz using Si and WBG devices. He obtained his doctoral degree from MIT in 2006. His research interests include power electronics, resonant converters, resonant gate drive techniques, high-frequency magnetics, and finding new applications for power converters.
Prof. Alberto Castellazzi is a Professor at Kyoto University of Advanced Science (KUAS), in Kyoto, Japan, where he leads research and teaching in solid-state power processing. His focus is on the characterization, deployment, packaging and thermal-management of novel wide-band-gap (WBG) semiconductor devices (silicon carbide, SiC; gallium nitride, GaN) to achieve breakthrough joint improvements in the efficiency, power density and reliability of switching power converters. He has authored or co-authored over 200 papers in specialist journals and conference proceedings and has held a number of invited talks, tutorials and seminars on SiC-based power electronics. Prof. Castellazzi is a member of the technical program committee of a number of international conferences and is active as a reviewer and editor.
Dr. Samuel Araujo studied Electrical Engineering and graduated (Bachelor) in 2006 at the Federal University of Ceará, Brazil. In the same year, he started the Master Course on Renewable Energies and Energy Efficiency (RE2) from the University of Kassel in Germany, concluding in the end of 2007. He worked as a research associate from 2007 until the beginning of 2009 in the Power Electronics Group at the Institute of Solar Energy (ISET) in Kassel and later moved to the Centre of Competence for Distributed Electric Power Technology (KDEE) at the University of Kassel; where he assumed the research group leadership in 2012. He finished his Ph.D. degree at the same university on 2013, benchmarking the performance of several SiC device technologies and investigating their potential on renewable energy sources. Since 2016, he is working at Robert Bosch GmbH in the Corporate Sector Research and Advance Engineering, assuming the coordination of the power electronics team in the middle of 2017. His main fields of interest are the design and optimization of power circuits and the investigation of innovative semiconductors devices.
A ONE DAY TABLETOP EXHIBITION will be held at the same venue (Room A) with the aid of the Japan Society of Applied Physics. Exhibitor list ♦ APOLLOWAVE Corporation ♦ Ascatron AB ♦ Ceramic Forum Co., Ltd. ♦ Hitachi Power Solutions Co., Ltd. ♦ ITES Co.,Ltd. ♦ JFE SHOJI ELECTORONICS CORPORATION ♦ KITZ SCT CORPORATION ♦ MPI Corporation ♦ NISSAN ARC, LTD. ♦ OTSUKA ELECTRONICS Co.,LTD. ♦ SHIIMA ELECTRONICS INC. ♦ STR Japan K.K. ♦ TAKACHIHO CHEMICAL INDUSTRIAL CO., LTD. ♦ YOSHINAGA SHOJI CO.,LTD.